IRF7101TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7101TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2 W 20 V Continuous Drain Current (ID):3.5 A 15 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 100 mΩ |
| Power Rating | 2 W |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | 3.5 A |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 3 V |
| Number of Channels | 2 |
| Input capacitance | 320 pF |
| Continuous Drain Current (ID) | 3.5 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 24 ns |
| Element Configuration | Dual |
| Fall Time | 30 ns |
| Rise Time | 10 ns |
| Dual Supply Voltage | 20 V |
| Row Spacing | 6.3 mm |
| Gate Charge | 15 nC |
| Drain to Source Resistance | 150 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 3 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| On-State Resistance | 100 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
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