IRF7103TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7103TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2 W 50 V Continuous Drain Current (ID):3 A 12 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 50 V |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 130 mΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Lead Free | Contains Lead, Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | IRF7103TRPBF |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 3 A |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 3 V |
| Number of Channels | 2 |
| Input capacitance | 290 pF |
| Continuous Drain Current (ID) | 3 A |
| Rds On Max | 130 mΩ |
| Drain to Source Voltage (Vdss) | 50 V |
| Turn-On Delay Time | 5.1 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Dual |
| Rise Time | 8 ns |
| Dual Supply Voltage | 50 V |
| Row Spacing | 6.3 mm |
| Gate Charge | 12 nC |
| Drain to Source Resistance | 110 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 3 V |
| Recovery Time | 100 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 50 V |
| On-State Resistance | 130 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 4922
Distributors
pcbx
pcbxUnit Price$0.30509
Ext.Price$0.30509
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.30509 | $0.30509 |
| 10 | $0.27151 | $2.71510 |
| 50 | $0.24163 | $12.08150 |
| 100 | $0.19896 | $19.89600 |
| 500 | $0.16383 | $81.91500 |
| 1000 | $0.15190 | $151.90000 |
| 3000 | $0.14083 | $422.49000 |