IRF7319TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7319TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel, P-Channel number of channels:2 2 W 30 V Continuous Drain Current (ID):6.5 A 22 nC
| Parameter | Value |
|---|---|
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 29 mΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Lead Free | Contains Lead, Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 6.5 A |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Number of Channels | 2 |
| Input capacitance | 650 pF |
| Continuous Drain Current (ID) | 6.5 A |
| Rds On Max | 29 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-Off Delay Time | 34 ns |
| Rise Time | 13 ns |
| Row Spacing | 6.3 mm |
| Gate Charge | 22 nC |
| Drain to Source Resistance | 46 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 29 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
Stock: 235
Distributors
pcbx
pcbxUnit Price$0.61814
Ext.Price$0.61814
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.61814 | $0.61814 |
| 10 | $0.49997 | $4.99970 |
| 25 | $0.45919 | $11.47975 |
| 50 | $0.42173 | $21.08650 |
| 100 | $0.38732 | $38.73200 |
| 300 | $0.37011 | $111.03300 |
| 500 | $0.35366 | $176.83000 |
| 1000 | $0.33533 | $335.33000 |