IRF7343TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7343TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel, P-Channel number of channels:2 2 W 55 V Continuous Drain Current (ID):4.7 A 24 nC
| Parameter | Value |
|---|---|
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 50 mΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 4.7 A |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Number of Channels | 2 |
| Input capacitance | 740 pF |
| Continuous Drain Current (ID) | 4.7 A |
| Rds On Max | 50 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Turn-On Delay Time | 8.3 ns |
| Turn-Off Delay Time | 43 ns |
| Fall Time | 22 ns |
| Rise Time | 10 ns |
| Row Spacing | 6.3 mm |
| Gate Charge | 24 nC |
| Drain to Source Resistance | 65 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| On-State Resistance | 50 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
Stock: 4021
Distributors
pcbx
pcbxUnit Price$0.39542
Ext.Price$0.39542
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.39542 | $0.39542 |
| 10 | $0.32122 | $3.21220 |
| 25 | $0.29649 | $7.41225 |
| 50 | $0.27366 | $13.68300 |
| 100 | $0.25259 | $25.25900 |
| 300 | $0.22850 | $68.55000 |
| 500 | $0.20671 | $103.35500 |
| 1000 | $0.19594 | $195.94000 |