IRF7389TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7389TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel, P-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):7.3 A 22 nC
| Parameter | Value |
|---|---|
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 29 mΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Lead Free | Contains Lead, Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 7.3 A |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 650 pF |
| Continuous Drain Current (ID) | 7.3 A |
| Rds On Max | 29 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-Off Delay Time | 34 ns |
| Rise Time | 13 ns |
| Row Spacing | 6.3 mm |
| Gate Charge | 22 nC |
| Drain to Source Resistance | 46 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 29 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
Stock: 7
Distributors
pcbx
pcbxUnit Price$1.01328
Ext.Price$1.01328
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.01328 | $1.01328 |
| 10 | $0.83760 | $8.37600 |
| 25 | $0.77707 | $19.42675 |
| 50 | $0.72092 | $36.04600 |
| 100 | $0.66882 | $66.88200 |
| 300 | $0.64144 | $192.43200 |
| 500 | $0.61517 | $307.58500 |
| 1000 | $0.58763 | $587.63000 |