IRF7493TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7493TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 80 V Continuous Drain Current (ID):9.3 A 31 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 80 V |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 15 MΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 9.3 A |
| Lifecycle Status | Obsolete (Last Updated: 7 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.51 nF |
| Continuous Drain Current (ID) | 9.3 A |
| Rds On Max | 15 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| Turn-On Delay Time | 8.3 ns |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Rise Time | 7.5 ns |
| Dual Supply Voltage | 80 V |
| Gate Charge | 31 nC |
| Drain to Source Resistance | 15 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 56 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| On-State Resistance | 15 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 4567
Distributors
pcbx
pcbxUnit Price$0.69667
Ext.Price$0.69667
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.69667 | $0.69667 |
| 10 | $0.56342 | $5.63420 |
| 25 | $0.51674 | $12.91850 |
| 50 | $0.47393 | $23.69650 |
| 100 | $0.43466 | $43.46600 |
| 300 | $0.41430 | $124.29000 |
| 500 | $0.39489 | $197.44500 |
| 1000 | $0.37500 | $375.00000 |