IRF7606TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7606TRPBF
Datasheet:
Description:
MOSFETs Micro-8 SMD/SMT P-Channel number of channels:1 1.8 W 30 V Continuous Drain Current (ID):3.6 A 20 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 3 mm |
| Width | 3 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 90 MΩ |
| Height | 860 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -3.6 A |
| Lifecycle Status | Production (Last Updated: 1 year ago) |
| Max Power Dissipation | 1.8 W |
| Power Dissipation | 1.8 W |
| Number of Channels | 1 |
| Input capacitance | 520 pF |
| Continuous Drain Current (ID) | 3.6 A |
| Rds On Max | 90 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 43 ns |
| Element Configuration | Single |
| Fall Time | 39 ns |
| Rise Time | 20 ns |
| Gate Charge | 20 nC |
| Drain to Source Resistance | 90 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 90 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 4000 |
| Gate to Source Threshold Voltage | 1 V |
| Drain to Source Breakdown Voltage | -30 V |
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