IRF7759L2TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7759L2TRPBF
Datasheet:
Description:
MOSFETs DIRECTFET L8 SMD/SMT N-Channel number of channels:1 125 W 75 V Continuous Drain Current (ID):26 A 200 nC
| Parameter | Value |
|---|---|
| Length | 9.144 mm |
| Width | 7.112 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 11 |
| Height | 508 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.3 W |
| Power Dissipation | 125 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 12.222 nF |
| Continuous Drain Current (ID) | 26 A |
| Rds On Max | 2.3 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 80 ns |
| Fall Time | 33 ns |
| Rise Time | 87 ns |
| Gate Charge | 200 nC |
| Drain to Source Resistance | 1.8 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 2.3 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 4000 |
| Gate to Source Threshold Voltage | 4 V |
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