IRF7831TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7831TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):21 A 40 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 3.6 MΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 21 A |
| Lifecycle Status | Obsolete (Last Updated: 7 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.35 V |
| Number of Channels | 1 |
| Input capacitance | 6.24 nF |
| Continuous Drain Current (ID) | 21 A |
| Rds On Max | 3.6 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 17 ns |
| Fall Time | 5.3 ns |
| Rise Time | 10 ns |
| Gate Charge | 40 nC |
| Drain to Source Resistance | 4.4 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2.35 V |
| Recovery Time | 62 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 3.6 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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