

| Parameter | Value |
|---|---|
| Gate Charge | 28 nC |
| Gate to Source Threshold Voltage | 4.9 V |
| Continuous Drain Current (ID) | 8.3 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 14.4 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 2.5 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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