IRF7910PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF7910PBF
Datasheet:
Description:
MOSFETs SO-8 SMD/SMT N-Channel number of channels:2 2 W 12 V Continuous Drain Current (ID):10 A 17 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 12 V |
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Height | 1.5 mm |
| Packaging | Bulk |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | 10 A |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 2 V |
| Number of Channels | 2 |
| Input capacitance | 1.73 nF |
| Continuous Drain Current (ID) | 10 A |
| Rds On Max | 15 mΩ |
| Drain to Source Voltage (Vdss) | 12 V |
| Turn-On Delay Time | 9.4 ns |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Dual |
| Rise Time | 22 ns |
| Dual Supply Voltage | 12 V |
| Gate Charge | 17 nC |
| Drain to Source Resistance | 15 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 12 V |
| On-State Resistance | 15 mΩ |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
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