IRF8010PBF
Manufacturer:
Infineon
Mfr.Part #:
IRF8010PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 260 W 100 V Continuous Drain Current (ID):80 A 81 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 15 Ω |
| Height | 8.763 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 80 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 260 W |
| Power Dissipation | 260 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 3.83 nF |
| Continuous Drain Current (ID) | 80 A |
| Rds On Max | 15 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 61 ns |
| Element Configuration | Single |
| Fall Time | 120 ns |
| Rise Time | 130 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 81 nC |
| Drain to Source Resistance | 15 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 150 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 15 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 263
Distributors
pcbx
pcbxUnit Price$1.34352
Ext.Price$1.34352
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.34352 | $1.34352 |
| 10 | $1.12829 | $11.28290 |
| 25 | $1.06686 | $26.67150 |
| 50 | $1.00877 | $50.43850 |
| 100 | $0.88338 | $88.33800 |
| 300 | $0.85263 | $255.78900 |
| 500 | $0.82295 | $411.47500 |
| 1000 | $0.79579 | $795.79000 |