IRF8113TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF8113TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 30 V Continuous Drain Current (ID):17.2 A 24 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 5.6 MΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 16.6 A |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.2 V |
| Number of Channels | 1 |
| Input capacitance | 2.91 nF |
| Continuous Drain Current (ID) | 17.2 A |
| Rds On Max | 5.6 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 17 ns |
| Fall Time | 3.5 ns |
| Rise Time | 8.9 ns |
| Dual Supply Voltage | 30 V |
| Row Spacing | 6.3 mm |
| Gate Charge | 24 nC |
| Drain to Source Resistance | 5.8 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2.2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 6 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 37
Distributors
pcbx
pcbxUnit Price$0.73382
Ext.Price$0.73382
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.73382 | $0.73382 |
| 10 | $0.59635 | $5.96350 |
| 25 | $0.54775 | $13.69375 |
| 50 | $0.50311 | $25.15550 |
| 100 | $0.46211 | $46.21100 |
| 300 | $0.44127 | $132.38100 |
| 500 | $0.42137 | $210.68500 |
| 1000 | $0.40022 | $400.22000 |