IRF9530NPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF9530NPBF
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole P-Channel number of channels:1 79 W -100 V Continuous Drain Current (ID):-14 A 38.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 200 mΩ |
| Height | 15.24 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -14 A |
| Max Power Dissipation | 79 W |
| Power Dissipation | 79 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 760 pF |
| Continuous Drain Current (ID) | -14 A |
| Rds On Max | 200 mΩ |
| Drain to Source Voltage (Vdss) | -100 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 46 ns |
| Rise Time | 58 ns |
| Dual Supply Voltage | -100 V |
| Gate Charge | 38.7 nC |
| Drain to Source Resistance | 200 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 190 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| On-State Resistance | 200 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 16603
Distributors
pcbx
pcbxUnit Price$0.27091
Ext.Price$0.27091
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.27091 | $0.27091 |
| 10 | $0.24012 | $2.40120 |
| 50 | $0.21283 | $10.64150 |
| 100 | $0.18361 | $18.36100 |
| 500 | $0.15840 | $79.20000 |
| 1000 | $0.15107 | $151.07000 |
| 3000 | $0.14408 | $432.24000 |
| 5000 | $0.13740 | $687.00000 |