IRF9530NSTRLPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF9530NSTRLPBF
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT P-Channel number of channels:1 3.8 W -100 V Continuous Drain Current (ID):-14 A 38.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 10.668 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 200 mΩ |
| Height | 4.826 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -14 A |
| Max Power Dissipation | 3.8 W |
| Power Dissipation | 3.8 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 760 pF |
| Continuous Drain Current (ID) | -14 A |
| Rds On Max | 200 mΩ |
| Drain to Source Voltage (Vdss) | -100 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 46 ns |
| Rise Time | 58 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 38.7 nC |
| Drain to Source Resistance | 200 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 190 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| On-State Resistance | 200 mΩ |
| Package Quantity | 800 |
| Gate to Source Threshold Voltage | 2.4 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 2408
Distributors
pcbx
pcbxUnit Price$1.15757
Ext.Price$1.15757
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.15757 | $1.15757 |
| 10 | $0.73866 | $7.38660 |
| 25 | $0.64677 | $16.16925 |
| 50 | $0.56631 | $28.31550 |
| 100 | $0.49586 | $49.58600 |
| 300 | $0.42844 | $128.53200 |
| 500 | $0.37019 | $185.09500 |
| 1000 | $0.33091 | $330.91000 |
| 3000 | $0.29580 | $887.40000 |