IRF9952TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF9952TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel, P-Channel number of channels:2 2 W 30 V Continuous Drain Current (ID):3.5 A 14 nC, 12 nC
| Parameter | Value |
|---|---|
| Length | 4.9784 mm |
| Width | 4.05 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 100 mΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Lead Free | Contains Lead, Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | 3.5 A |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Number of Channels | 2 |
| Input capacitance | 190 pF |
| Continuous Drain Current (ID) | 3.5 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-Off Delay Time | 20 ns |
| Rise Time | 14 ns |
| Row Spacing | 6.3 mm |
| Gate Charge | 14 nC, 12 nC |
| Drain to Source Resistance | 150 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1 V |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 150 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3800 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
Stock: 263
Distributors
pcbx
pcbxUnit Price$0.47261
Ext.Price$0.47261
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.47261 | $0.47261 |
| 10 | $0.38170 | $3.81700 |
| 25 | $0.35165 | $8.79125 |
| 50 | $0.32397 | $16.19850 |
| 100 | $0.29847 | $29.84700 |
| 300 | $0.26952 | $80.85600 |
| 500 | $0.24337 | $121.68500 |
| 1000 | $0.22960 | $229.60000 |