IRF9953TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF9953TRPBF
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:2 2 W -30 V Continuous Drain Current (ID):2.3 A 6.9 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 250 mΩ |
| Height | 1.4986 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 2 |
| Current Rating | -2.3 A |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Number of Channels | 2 |
| Input capacitance | 190 pF |
| Continuous Drain Current (ID) | 2.3 A |
| Rds On Max | 250 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 9.7 ns |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Dual |
| Fall Time | 6.9 ns |
| Rise Time | 14 ns |
| Gate Charge | 6.9 nC |
| Drain to Source Resistance | 400 µΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| On-State Resistance | 250 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 4000 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | P-Channel |
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