IRF9Z34NPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF9Z34NPBF
Datasheet:
Description:
MOSFETs TO-220 Through Hole P-Channel number of channels:1 56 W -55 V Continuous Drain Current (ID):-17 A 23.3 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -55 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 8.77 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -19 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 68 W |
| Power Dissipation | 56 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 620 pF |
| Continuous Drain Current (ID) | -17 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | -55 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Fall Time | 41 ns |
| Rise Time | 55 ns |
| Dual Supply Voltage | -55 V |
| Gate Charge | 23.3 nC |
| Drain to Source Resistance | 100 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 82 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -55 V |
| On-State Resistance | 100 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 6233
Distributors
pcbx
pcbxUnit Price$0.28819
Ext.Price$0.28819
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.28819 | $0.28819 |
| 10 | $0.25912 | $2.59120 |
| 50 | $0.23299 | $11.64950 |
| 100 | $0.19944 | $19.94400 |
| 500 | $0.17072 | $85.36000 |
| 1000 | $0.16231 | $162.31000 |
| 3000 | $0.15431 | $462.93000 |
| 5000 | $0.14671 | $733.55000 |