IRF9Z34NSTRLPBF
Manufacturer:
Infineon
Mfr.Part #:
IRF9Z34NSTRLPBF
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT P-Channel number of channels:1 68 W -55 V Continuous Drain Current (ID):19 A 35 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -55 V |
| Length | 10.668 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 4.83 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | IRF9Z34NSTRLPBF |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -19 A |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.8 W |
| Power Dissipation | 68 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 620 pF |
| Continuous Drain Current (ID) | 19 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | -55 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Fall Time | 41 ns |
| Rise Time | 55 ns |
| Dual Supply Voltage | 55 V |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 100 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | -4 V |
| Recovery Time | 82 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -55 V |
| On-State Resistance | 100 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 800 |
| Gate to Source Threshold Voltage | 1 V |
Stock: 649
Distributors
pcbx
pcbxUnit Price$1.15104
Ext.Price$1.15104
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.15104 | $1.15104 |
| 10 | $0.96480 | $9.64800 |
| 25 | $0.90071 | $22.51775 |
| 50 | $0.84088 | $42.04400 |
| 100 | $0.78502 | $78.50200 |
| 300 | $0.71369 | $214.10700 |
| 500 | $0.64883 | $324.41500 |