IRFB31N20DPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB31N20DPBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 200 W 200 V Continuous Drain Current (ID):31 A 70 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 82 mΩ |
| Height | 8.763 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 31 A |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.1 W |
| Power Dissipation | 200 W |
| Threshold Voltage | 5.5 V |
| Number of Channels | 1 |
| Input capacitance | 2.37 nF |
| Continuous Drain Current (ID) | 31 A |
| Rds On Max | 82 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 26 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 38 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 70 nC |
| Drain to Source Resistance | 82 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5.5 V |
| Recovery Time | 300 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 82 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 5.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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