IRFB3207PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB3207PBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 300 W 75 V Continuous Drain Current (ID):180 A 180 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 75 V |
| Length | 10.6426 mm |
| Width | 4.826 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.82 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 180 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 300 W |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 7.6 nF |
| Continuous Drain Current (ID) | 180 A |
| Rds On Max | 4.5 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| Turn-On Delay Time | 29 ns |
| Turn-Off Delay Time | 68 ns |
| Element Configuration | Single |
| Fall Time | 74 ns |
| Rise Time | 120 ns |
| Dual Supply Voltage | 75 V |
| Gate Charge | 180 nC |
| Drain to Source Resistance | 3.6 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 4.5 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 484
Distributors
pcbx
pcbxUnit Price$0.89059
Ext.Price$0.89059
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.89059 | $0.89059 |
| 10 | $0.72998 | $7.29980 |
| 25 | $0.66334 | $16.58350 |
| 50 | $0.60278 | $30.13900 |
| 100 | $0.52797 | $52.79700 |
| 300 | $0.50283 | $150.84900 |
| 500 | $0.47889 | $239.44500 |
| 1000 | $0.45609 | $456.09000 |