IRFB3207ZPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB3207ZPBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 300 W 75 V Continuous Drain Current (ID):170 A 120 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 75 V |
| Length | 10.66 mm |
| Width | 4.82 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 4.1 MΩ |
| Height | 9.017 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 170 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 300 W |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 6.92 nF |
| Continuous Drain Current (ID) | 170 A |
| Rds On Max | 4.1 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 55 ns |
| Element Configuration | Single |
| Rise Time | 68 ns |
| Dual Supply Voltage | 75 V |
| Gate Charge | 120 nC |
| Drain to Source Resistance | 4.1 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 54 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 4.1 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 4
Distributors
pcbx
pcbxUnit Price$1.01818
Ext.Price$1.01818
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.01818 | $1.01818 |
| 10 | $0.84998 | $8.49980 |
| 25 | $0.80294 | $20.07350 |
| 50 | $0.75850 | $37.92500 |
| 100 | $0.66203 | $66.20300 |
| 300 | $0.62757 | $188.27100 |
| 500 | $0.59490 | $297.45000 |