IRFB3307ZPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB3307ZPBF
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 230 W 75 V Continuous Drain Current (ID):120 A 110 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 75 V |
| Length | 10.66 mm |
| Width | 4.82 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 5.8 MΩ |
| Height | 9.02 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 120 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 230 W |
| Power Dissipation | 230 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 4.75 nF |
| Continuous Drain Current (ID) | 120 A |
| Rds On Max | 5.8 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 38 ns |
| Element Configuration | Single |
| Fall Time | 65 ns |
| Rise Time | 64 ns |
| Dual Supply Voltage | 75 V |
| Gate Charge | 110 nC |
| Drain to Source Resistance | 5.8 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 33 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 5.8 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
Stock: 104
Distributors
pcbx
pcbxUnit Price$1.08749
Ext.Price$1.08749
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.08749 | $1.08749 |
| 10 | $0.90422 | $9.04220 |
| 25 | $0.85198 | $21.29950 |
| 50 | $0.80275 | $40.13750 |
| 100 | $0.69481 | $69.48100 |
| 300 | $0.66906 | $200.71800 |
| 500 | $0.64427 | $322.13500 |
| 1000 | $0.62129 | $621.29000 |