IRFB3607PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB3607PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 140 W 75 V Continuous Drain Current (ID):80 A 84 nC
| Parameter | Value |
|---|---|
| Length | 10.6426 mm |
| Width | 4.82 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 9 MΩ |
| Height | 9.017 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 140 W |
| Power Dissipation | 140 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 3.07 nF |
| Continuous Drain Current (ID) | 80 A |
| Rds On Max | 9 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 43 ns |
| Element Configuration | Single |
| Fall Time | 96 ns |
| Rise Time | 110 ns |
| Dual Supply Voltage | 75 V |
| Gate Charge | 84 nC |
| Drain to Source Resistance | 7.34 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 50 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 9 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 15011
Distributors
pcbx
pcbxUnit Price$0.31517
Ext.Price$0.31517
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.31517 | $0.31517 |
| 10 | $0.27579 | $2.75790 |
| 50 | $0.24134 | $12.06700 |
| 100 | $0.20856 | $20.85600 |
| 500 | $0.18023 | $90.11500 |
| 1000 | $0.17632 | $176.32000 |
| 3000 | $0.17250 | $517.50000 |
| 5000 | $0.16876 | $843.80000 |