IRFB38N20DPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB38N20DPBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 3.8 W 200 V Continuous Drain Current (ID):43 A 91 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.668 mm |
| Width | 4.826 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 54 Ω |
| Height | 9.017 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 38 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.8 W |
| Power Dissipation | 3.8 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 2.9 nF |
| Continuous Drain Current (ID) | 43 A |
| Rds On Max | 54 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 29 ns |
| Element Configuration | Single |
| Fall Time | 47 ns |
| Rise Time | 95 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 91 nC |
| Drain to Source Resistance | 54 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5 V |
| Recovery Time | 240 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 54 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 100
Distributors
pcbx
pcbxUnit Price$1.34342
Ext.Price$1.34342
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.34342 | $1.34342 |
| 10 | $1.12224 | $11.22240 |
| 25 | $0.97651 | $24.41275 |
| 50 | $0.84970 | $42.48500 |
| 100 | $0.71926 | $71.92600 |
| 300 | $0.68797 | $206.39100 |
| 500 | $0.65805 | $329.02500 |
| 1000 | $0.63050 | $630.50000 |