IRFB4019PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB4019PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 80 W 150 V Continuous Drain Current (ID):17 A 13 nC
| Parameter | Value |
|---|---|
| Length | 10.6426 mm |
| Width | 4.82 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 95 MΩ |
| Height | 9.02 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 80 W |
| Power Dissipation | 80 W |
| Threshold Voltage | 4.9 V |
| Number of Channels | 1 |
| Input capacitance | 800 pF |
| Continuous Drain Current (ID) | 17 A |
| Rds On Max | 95 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 12 ns |
| Element Configuration | Single |
| Fall Time | 7.8 ns |
| Rise Time | 13 ns |
| Dual Supply Voltage | 150 V |
| Gate Charge | 13 nC |
| Drain to Source Resistance | 80 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4.9 V |
| Recovery Time | 96 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 150 V |
| On-State Resistance | 95 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4.9 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 200
Distributors
pcbx
pcbxUnit Price$1.08749
Ext.Price$1.08749
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.08749 | $1.08749 |
| 10 | $0.88906 | $8.89060 |
| 25 | $0.79467 | $19.86675 |
| 50 | $0.71030 | $35.51500 |
| 100 | $0.61828 | $61.82800 |
| 300 | $0.58769 | $176.30700 |
| 500 | $0.55862 | $279.31000 |
| 1000 | $0.52797 | $527.97000 |