IRFB4020PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB4020PBF
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 100 W 200 V Continuous Drain Current (ID):18 A 18 nC
| Parameter | Value |
|---|---|
| Length | 10.6426 mm |
| Width | 4.82 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 9.02 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 100 W |
| Power Dissipation | 100 W |
| Threshold Voltage | 4.9 V |
| Number of Channels | 1 |
| Input capacitance | 1.2 nF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 7.8 ns |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Fall Time | 6.3 ns |
| Rise Time | 12 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 100 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4.9 V |
| Recovery Time | 120 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 100 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
Stock: 32
Distributors
pcbx
pcbxUnit Price$0.76810
Ext.Price$0.76810
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.76810 | $0.76810 |
| 10 | $0.62726 | $6.27260 |
| 25 | $0.59139 | $14.78475 |
| 50 | $0.55757 | $27.87850 |
| 100 | $0.49295 | $49.29500 |
| 300 | $0.47103 | $141.30900 |
| 500 | $0.45008 | $225.04000 |
| 1000 | $0.42864 | $428.64000 |