IRFB4110PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB4110PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 370 W 100 V Continuous Drain Current (ID):180 A 150 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.66 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 16.51 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 180 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 370 W |
| Power Dissipation | 370 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 9.62 nF |
| Continuous Drain Current (ID) | 180 A |
| Rds On Max | 4.5 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 78 ns |
| Element Configuration | Single |
| Fall Time | 88 ns |
| Rise Time | 67 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 150 nC |
| Drain to Source Resistance | 4.5 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 75 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 4.5 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 29333
Distributors
pcbx
pcbxUnit Price$0.66058
Ext.Price$0.66058
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.66058 | $0.66058 |
| 10 | $0.56515 | $5.65150 |
| 25 | $0.49832 | $12.45800 |
| 50 | $0.43939 | $21.96950 |
| 100 | $0.38887 | $38.88700 |
| 300 | $0.37404 | $112.21200 |
| 500 | $0.35977 | $179.88500 |