IRFB4127PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB4127PBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 375 W 200 V Continuous Drain Current (ID):76 A 100 nC
| Parameter | Value |
|---|---|
| Length | 10.668 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 20 MΩ |
| Height | 9.02 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 375 W |
| Power Dissipation | 375 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 5.38 nF |
| Continuous Drain Current (ID) | 76 A |
| Rds On Max | 20 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 56 ns |
| Element Configuration | Single |
| Fall Time | 22 ns |
| Rise Time | 18 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 100 nC |
| Drain to Source Resistance | 17 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 20 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2237
Distributors
pcbx
pcbxUnit Price$0.90451
Ext.Price$0.90451
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.90451 | $0.90451 |
| 10 | $0.73027 | $7.30270 |
| 25 | $0.66976 | $16.74400 |
| 50 | $0.61427 | $30.71350 |
| 100 | $0.56338 | $56.33800 |
| 300 | $0.53671 | $161.01300 |
| 500 | $0.51129 | $255.64500 |
| 1000 | $0.48374 | $483.74000 |