IRFB4227PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB4227PBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 330 W 200 V Continuous Drain Current (ID):65 A 70 nC
| Parameter | Value |
|---|---|
| Length | 10.6426 mm |
| Width | 4.82 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 3 |
| Resistance | 24 MΩ |
| Height | 9.02 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 330 W |
| Power Dissipation | 330 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 4.6 nF |
| Continuous Drain Current (ID) | 65 A |
| Rds On Max | 24 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 33 ns |
| Turn-Off Delay Time | 21 ns |
| Element Configuration | Single |
| Fall Time | 31 ns |
| Rise Time | 20 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 70 nC |
| Drain to Source Resistance | 19.7 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5 V |
| Recovery Time | 150 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 26 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 303
Distributors
pcbx
pcbxUnit Price$1.70381
Ext.Price$1.70381
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.70381 | $1.70381 |
| 10 | $1.34327 | $13.43270 |
| 25 | $1.05903 | $26.47575 |
| 50 | $0.83493 | $41.74650 |
| 100 | $0.75076 | $75.07600 |
| 300 | $0.67294 | $201.88200 |
| 500 | $0.60319 | $301.59500 |
| 1000 | $0.55574 | $555.74000 |
| 3000 | $0.53057 | $1591.71000 |
| 5000 | $0.50655 | $2532.75000 |