IRFB4229PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB4229PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 330 W 250 V Continuous Drain Current (ID):46 A 110 nC
| Parameter | Value |
|---|---|
| Length | 10.6426 mm |
| Width | 4.82 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 3 |
| Resistance | 46 MΩ |
| Height | 16.51 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 330 W |
| Power Dissipation | 330 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 4.56 nF |
| Continuous Drain Current (ID) | 46 A |
| Rds On Max | 46 mΩ |
| Drain to Source Voltage (Vdss) | 250 V |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Fall Time | 21 ns |
| Rise Time | 31 ns |
| Dual Supply Voltage | 250 V |
| Gate Charge | 110 nC |
| Drain to Source Resistance | 46 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5 V |
| Recovery Time | 290 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 250 V |
| On-State Resistance | 46 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 481
Distributors
pcbx
pcbxUnit Price$1.44835
Ext.Price$1.44835
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.44835 | $1.44835 |
| 10 | $1.23024 | $12.30240 |
| 25 | $1.09390 | $27.34750 |
| 50 | $0.97267 | $48.63350 |
| 100 | $0.84497 | $84.49700 |
| 300 | $0.81459 | $244.37700 |
| 500 | $0.78531 | $392.65500 |
| 1000 | $0.75776 | $757.76000 |