IRFB4610PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB4610PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 190 W 100 V Continuous Drain Current (ID):73 A 90 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.54 mm |
| Width | 4.69 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 14 mΩ |
| Height | 8.77 mm |
| Packaging | Tube |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 73 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 190 W |
| Power Dissipation | 190 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 3.55 nF |
| Continuous Drain Current (ID) | 73 A |
| Rds On Max | 14 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 53 ns |
| Reverse Recovery Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 70 ns |
| Rise Time | 87 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 90 nC |
| Drain to Source Resistance | 11 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 53 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 14 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 4
Distributors
pcbx
pcbxUnit Price$1.85184
Ext.Price$1.85184
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.85184 | $1.85184 |
| 10 | $1.56720 | $15.67200 |
| 25 | $1.44208 | $36.05200 |
| 50 | $1.32695 | $66.34750 |
| 100 | $1.22104 | $122.10400 |
| 300 | $1.17910 | $353.73000 |
| 500 | $1.13859 | $569.29500 |
| 1000 | $1.10260 | $1102.60000 |