IRFB52N15DPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB52N15DPBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 320 W 150 V Continuous Drain Current (ID):60 A 60 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 150 V |
| Length | 10.66 mm |
| Width | 4.82 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 32 Ω |
| Height | 16.51 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 51 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.8 W |
| Power Dissipation | 320 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 2.77 nF |
| Continuous Drain Current (ID) | 60 A |
| Rds On Max | 32 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 28 ns |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Rise Time | 47 ns |
| Dual Supply Voltage | 150 V |
| Gate Charge | 60 nC |
| Drain to Source Resistance | 32 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5 V |
| Recovery Time | 210 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 150 V |
| On-State Resistance | 32 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 457
Distributors
pcbx
pcbxUnit Price$1.56000
Ext.Price$1.56000
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.56000 | $1.56000 |
| 10 | $1.27978 | $12.79780 |
| 25 | $1.20006 | $30.00150 |
| 50 | $1.12531 | $56.26550 |
| 100 | $0.95952 | $95.95200 |
| 300 | $0.91965 | $275.89500 |
| 500 | $0.88144 | $440.72000 |
| 1000 | $0.84633 | $846.33000 |