IRFB5620PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB5620PBF
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 144 W 200 V Continuous Drain Current (ID):25 A 25 nC
| Parameter | Value |
|---|---|
| Length | 10.668 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 72.5 MΩ |
| Height | 9.02 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 144 W |
| Power Dissipation | 144 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 1.71 nF |
| Continuous Drain Current (ID) | 25 A |
| Rds On Max | 72.5 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 8.6 ns |
| Turn-Off Delay Time | 17.1 ns |
| Element Configuration | Single |
| Fall Time | 9.9 ns |
| Rise Time | 14.6 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 25 nC |
| Drain to Source Resistance | 60 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 72.5 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2212
Distributors
pcbx
pcbxUnit Price$1.46458
Ext.Price$1.46458
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.46458 | $1.46458 |
| 10 | $1.22371 | $12.23710 |
| 25 | $1.15598 | $28.89950 |
| 50 | $1.09200 | $54.60000 |
| 100 | $0.95186 | $95.18600 |
| 300 | $0.91758 | $275.27400 |
| 500 | $0.88454 | $442.27000 |
| 1000 | $0.85544 | $855.44000 |