IRFB59N10D
Manufacturer:
VBsemi
Mfr.Part #:
IRFB59N10D
Datasheet:
Description:
MOSFETs TO-220AB Through Hole N-Channel number of channels:1 3.35 W 100 V Continuous Drain Current (ID):70 A 90 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 3.35 W |
| Number of Channels | 1 |
| Input capacitance | 1.5 nF |
| Continuous Drain Current (ID) | 70 A |
| Gate Charge | 90 nC |
| Drain to Source Resistance | 18 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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