IRFB812PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFB812PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 78 W 500 V Continuous Drain Current (ID):3.6 A 13.3 nC
| Parameter | Value |
|---|---|
| Gate Charge | 13.3 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 3.6 A |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 1.75 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 78 W |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
| Input capacitance | 810 pF |
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