IRFD014PBF
Manufacturer:
Vishay
Mfr.Part #:
IRFD014PBF
Datasheet:
Description:
MOSFETs DIP-4 Through Hole N-Channel number of channels:1 1.3 W 60 V Continuous Drain Current (ID):1.7 A 11 nC
| Parameter | Value |
|---|---|
| Length | 6.2738 mm |
| Width | 5.0038 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Resistance | 200 mΩ |
| Height | 3.3782 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Output Current | 1.4 A |
| Max Power Dissipation | 1.3 W |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 310 pF |
| Continuous Drain Current (ID) | 1.7 A |
| Rds On Max | 200 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 13 ns |
| Element Configuration | Single |
| Fall Time | 50 ns |
| Rise Time | 50 ns |
| Gate Charge | 11 nC |
| Drain to Source Resistance | 200 mΩ |
| Recovery Time | 140 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
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