IRFD110PBF
Manufacturer:
Vishay
Mfr.Part #:
IRFD110PBF
Datasheet:
Description:
MOSFETs DIP-4 Through Hole N-Channel number of channels:1 1.3 W 100 V Continuous Drain Current (ID):1 A 8.3 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 5 mm |
| Width | 6.29 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Resistance | 540 mΩ |
| Height | 3.37 mm |
| Packaging | Tube |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Current Rating | 1 A |
| Max Power Dissipation | 1.3 W |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 180 pF |
| Continuous Drain Current (ID) | 1 A |
| Rds On Max | 540 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 6.9 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Fall Time | 16 ns |
| Rise Time | 16 ns |
| Dual Supply Voltage | 100 V |
| Row Spacing | 7.62 mm |
| Gate Charge | 8.3 nC |
| Drain to Source Resistance | 540 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 200 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
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