IRFD9110PBF
Manufacturer:
Vishay
Mfr.Part #:
IRFD9110PBF
Datasheet:
Description:
MOSFETs DIP-4 Through Hole P-Channel number of channels:1 1.3 W 100 V Continuous Drain Current (ID):700 mA 8.7 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 6.2738 mm |
| Width | 5.0038 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Resistance | 1.2 Ω |
| Height | 3.3782 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Current Rating | -700 mA |
| Output Current | 1.4 A |
| Max Power Dissipation | 1.3 W |
| Power Dissipation | 1.3 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 200 pF |
| Continuous Drain Current (ID) | 700 mA |
| Rds On Max | 1.2 Ω |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Fall Time | 27 ns |
| Rise Time | 27 ns |
| Gate Charge | 8.7 nC |
| Drain to Source Resistance | 1.2 Ω |
| Nominal Vgs | -4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
Stock: 4
Distributors
pcbx
pcbxUnit Price$1.02998
Ext.Price$1.02998
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.02998 | $1.02998 |
| 10 | $0.84701 | $8.47010 |
| 25 | $0.76040 | $19.01000 |
| 50 | $0.68265 | $34.13250 |
| 100 | $0.61285 | $61.28500 |
| 300 | $0.58460 | $175.38000 |
| 500 | $0.55765 | $278.82500 |
| 1000 | $0.52933 | $529.33000 |