IRFD9220PBF
Manufacturer:
Vishay
Mfr.Part #:
IRFD9220PBF
Datasheet:
Description:
MOSFETs DIP-4 Through Hole P-Channel number of channels:1 1 W 200 V Continuous Drain Current (ID):560 mA 15 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -200 V |
| Length | 6.29 mm |
| Width | 5 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Resistance | 1.5 Ω |
| Height | 3.37 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Current Rating | -560 mA |
| Max Power Dissipation | 1 W |
| Power Dissipation | 1 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 340 pF |
| Continuous Drain Current (ID) | 560 mA |
| Rds On Max | 1.5 Ω |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 8.8 ns |
| Turn-Off Delay Time | 7.3 ns |
| Element Configuration | Single |
| Fall Time | 19 ns |
| Rise Time | 27 ns |
| Gate Charge | 15 nC |
| Drain to Source Resistance | 1.5 Ω |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 4 V |
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