IRFH5302DTRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFH5302DTRPBF
Datasheet:
Description:
MOSFETs PQFN-8 SMD/SMT N-Channel number of channels:1 3.6 W 30 V Continuous Drain Current (ID):29 A 26 nC
| Parameter | Value |
|---|---|
| Length | 5.9944 mm |
| Width | 5 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 2.5 mΩ |
| Height | 838.2 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 3.6 W |
| Power Dissipation | 3.6 W |
| Number of Channels | 1 |
| Input capacitance | 3.635 nF |
| Continuous Drain Current (ID) | 29 A |
| Rds On Max | 2.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 20 ns |
| Fall Time | 12 ns |
| Rise Time | 30 ns |
| Gate Charge | 26 nC |
| Drain to Source Resistance | 3.1 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 2.5 mΩ |
| Package Quantity | 4000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
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