| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 55 V |
| Length | 15.875 mm |
| Width | 5.3 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 20.3 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 5.45 mm |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 36 A |
| Lifecycle Status | Obsolete (Last Updated: 7 months ago) |
| Max Power Dissipation | 140 W |
| Power Dissipation | 130 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.9 nF |
| Continuous Drain Current (ID) | 64 A |
| Rds On Max | 16 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 32 ns |
| Element Configuration | Single |
| Fall Time | 48 ns |
| Rise Time | 78 ns |
| Dual Supply Voltage | 55 V |
| Gate Charge | 89 nC |
| Drain to Source Resistance | 16 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 140 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| On-State Resistance | 16 mΩ |
| Package Quantity | 400 |
| Gate to Source Threshold Voltage | 4 V |
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