IRFP32N50KPBF
Manufacturer:
Vishay
Mfr.Part #:
IRFP32N50KPBF
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 460 W 500 V Continuous Drain Current (ID):32 A 190 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 500 V |
| Length | 15.87 mm |
| Width | 5.31 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 135 mΩ |
| Height | 20.7 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 32 A |
| Max Power Dissipation | 460 W |
| Power Dissipation | 460 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 5.28 nF |
| Continuous Drain Current (ID) | 32 A |
| Rds On Max | 160 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 28 ns |
| Turn-Off Delay Time | 48 ns |
| Element Configuration | Single |
| Fall Time | 54 ns |
| Rise Time | 120 ns |
| Gate Charge | 190 nC |
| Drain to Source Resistance | 160 mΩ |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
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