IRFP4110PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFP4110PBF
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 370 W 100 V Continuous Drain Current (ID):180 A 150 nC
| Parameter | Value |
|---|---|
| Length | 15.87 mm |
| Width | 5.3086 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 4.5 MΩ |
| Height | 20.7 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 370 W |
| Power Dissipation | 370 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 9.62 nF |
| Continuous Drain Current (ID) | 180 A |
| Rds On Max | 4.5 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 78 ns |
| Element Configuration | Single |
| Fall Time | 88 ns |
| Rise Time | 67 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 150 nC |
| Drain to Source Resistance | 4.5 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 75 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 4.5 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 400 |
| Gate to Source Threshold Voltage | 1.8 V |
Stock: 188
Distributors
pcbx
pcbxUnit Price$1.75891
Ext.Price$1.75891
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.75891 | $1.75891 |
| 10 | $1.51958 | $15.19580 |
| 25 | $1.24685 | $31.17125 |
| 50 | $1.17390 | $58.69500 |
| 100 | $1.10522 | $110.52200 |
| 300 | $1.05352 | $316.05600 |
| 500 | $1.00424 | $502.12000 |