IRFP4368PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFP4368PBF
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 520 W 75 V Continuous Drain Current (ID):350 A 380 nC
| Parameter | Value |
|---|---|
| Length | 15.87 mm |
| Width | 5.3086 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.85 MΩ |
| Height | 20.7 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Max Power Dissipation | 520 W |
| Power Dissipation | 520 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 19.23 nF |
| Continuous Drain Current (ID) | 350 A |
| Rds On Max | 1.85 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 43 ns |
| Turn-Off Delay Time | 170 ns |
| Element Configuration | Single |
| Fall Time | 260 ns |
| Rise Time | 220 ns |
| Dual Supply Voltage | 75 V |
| Gate Charge | 380 nC |
| Drain to Source Resistance | 1.46 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 200 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 1.8 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 400 |
| Gate to Source Threshold Voltage | 1.8 V |
Stock: 1334
Distributors
pcbx
pcbxUnit Price$1.45142
Ext.Price$1.45142
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.45142 | $1.45142 |
| 10 | $1.22717 | $12.27170 |
| 25 | $0.99533 | $24.88325 |
| 50 | $0.92863 | $46.43150 |
| 100 | $0.86640 | $86.64000 |
| 300 | $0.83443 | $250.32900 |
| 500 | $0.80365 | $401.82500 |
| 1000 | $0.77610 | $776.10000 |