IRFP4468PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFP4468PBF
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 520 W 100 V Continuous Drain Current (ID):290 A 360 nC
| Parameter | Value |
|---|---|
| Length | 15.87 mm |
| Width | 5.3086 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 2.6 MΩ |
| Height | 20.7 mm |
| Packaging | Tube |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 520 W |
| Power Dissipation | 520 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 19.86 nF |
| Continuous Drain Current (ID) | 290 A |
| Rds On Max | 2.6 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 52 ns |
| Turn-Off Delay Time | 160 ns |
| Element Configuration | Single |
| Fall Time | 260 ns |
| Rise Time | 230 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 360 nC |
| Drain to Source Resistance | 2 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 2.6 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 400 |
| Gate to Source Threshold Voltage | 1.8 V |
Stock: 2772
Distributors
pcbx
pcbxUnit Price$1.38653
Ext.Price$1.38653
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.38653 | $1.38653 |
| 10 | $1.22179 | $12.21790 |
| 25 | $1.06752 | $26.68800 |
| 50 | $1.01366 | $50.68300 |
| 100 | $0.96253 | $96.25300 |
| 300 | $0.93776 | $281.32800 |
| 500 | $0.91364 | $456.82000 |
| 1000 | $0.89075 | $890.75000 |