IRFP4668PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFP4668PBF
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 520 W 200 V Continuous Drain Current (ID):130 A 161 nC
| Parameter | Value |
|---|---|
| Length | 15.87 mm |
| Width | 5.3086 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 9.7 MΩ |
| Height | 20.7 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 520 W |
| Power Dissipation | 520 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 10.72 nF |
| Continuous Drain Current (ID) | 130 A |
| Rds On Max | 9.7 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 41 ns |
| Turn-Off Delay Time | 64 ns |
| Element Configuration | Single |
| Fall Time | 74 ns |
| Rise Time | 105 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 161 nC |
| Drain to Source Resistance | 8 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 9.7 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 400 |
| Gate to Source Threshold Voltage | 1.8 V |
Stock: 486
Distributors
pcbx
pcbxUnit Price$1.70890
Ext.Price$1.70890
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.70890 | $1.70890 |
| 10 | $1.52256 | $15.22560 |
| 25 | $1.21354 | $30.33850 |
| 50 | $1.15731 | $57.86550 |
| 100 | $1.10367 | $110.36700 |
| 300 | $1.07502 | $322.50600 |
| 500 | $1.04712 | $523.56000 |
| 1000 | $1.02413 | $1024.13000 |