IRFP4710PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFP4710PBF
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 190 W 100 V Continuous Drain Current (ID):72 A 110 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 15.875 mm |
| Width | 5.3 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 14 Ω |
| Height | 20.2946 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 72 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 190 W |
| Power Dissipation | 190 W |
| Threshold Voltage | 5.5 V |
| Number of Channels | 1 |
| Input capacitance | 6.16 nF |
| Continuous Drain Current (ID) | 72 A |
| Rds On Max | 14 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 35 ns |
| Turn-Off Delay Time | 41 ns |
| Element Configuration | Single |
| Fall Time | 38 ns |
| Rise Time | 130 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 110 nC |
| Drain to Source Resistance | 14 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5.5 V |
| Recovery Time | 110 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 14 mΩ |
| Package Quantity | 400 |
| Gate to Source Threshold Voltage | 1.8 V |
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