IRFP90N20DPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFP90N20DPBF
Datasheet:
Description:
MOSFETs TO-247-3 Through Hole N-Channel number of channels:1 580 W 200 V Continuous Drain Current (ID):94 A 180 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 15.875 mm |
| Width | 5.3 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 23 mΩ |
| Height | 20.3 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 94 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 580 W |
| Power Dissipation | 580 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 6.04 nF |
| Continuous Drain Current (ID) | 94 A |
| Rds On Max | 23 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 23 ns |
| Turn-Off Delay Time | 43 ns |
| Element Configuration | Single |
| Fall Time | 79 ns |
| Rise Time | 160 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 180 nC |
| Drain to Source Resistance | 23 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5 V |
| Recovery Time | 340 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 23 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 400 |
| Gate to Source Threshold Voltage | 1.8 V |
Stock: 1122
Distributors
pcbx
pcbxUnit Price$2.34442
Ext.Price$2.34442
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.34442 | $2.34442 |
| 10 | $1.96435 | $19.64350 |
| 25 | $1.72656 | $43.16400 |
| 50 | $1.60832 | $80.41600 |
| 100 | $1.49817 | $149.81700 |
| 300 | $1.44312 | $432.93600 |
| 500 | $1.39009 | $695.04500 |
| 1000 | $1.33899 | $1338.99000 |