IRFR3410TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFR3410TRPBF
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 110 W 100 V Continuous Drain Current (ID):31 A 37 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 6.7056 mm |
| Width | 6.22 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 39 MΩ |
| Height | 2.3876 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 31 A |
| Lifecycle Status | Obsolete (Last Updated: 7 months ago) |
| Max Power Dissipation | 3 W |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.69 nF |
| Continuous Drain Current (ID) | 31 A |
| Rds On Max | 39 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Fall Time | 13 ns |
| Rise Time | 27 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 37 nC |
| Drain to Source Resistance | 34 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 39 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 2000 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 1305
Distributors
pcbx
pcbxUnit Price$0.42346
Ext.Price$0.42346
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.42346 | $0.42346 |
| 10 | $0.32966 | $3.29660 |
| 25 | $0.29779 | $7.44475 |
| 50 | $0.26900 | $13.45000 |
| 100 | $0.24299 | $24.29900 |
| 300 | $0.23126 | $69.37800 |
| 500 | $0.22009 | $110.04500 |
| 1000 | $0.20632 | $206.32000 |